sanrex ? thyristor/thyristor thyristor/diode i t(av) = 200a, v rrm = 800 - 1800v sanrex thyristor/thyristor ( sca series ), thyristor/diode ( sce series ) are designed for general purpose high voltage applications. the modules are an isolated industrial standard package. features * glass-passivated junctions feature * high surge current (i tsm =6500a) * low on-state voltage drop (v tm =1.4v) * ul e76102 approved * rohs compliance typical applications * welders * uninterruptible power supplies (ups) * temperature and lighting controls * soft starters * battery chargers < maximum ratings > tj = 25 c (unless otherwise noted) per diode ratings symbol item SCA200AA80 sce200aa80 SCA200AA120 sce200aa120 SCA200AA160 sce200aa160 SCA200AA180 sce200aa180 unit v rrm repetitive peak reverse voltage 800 1200 1600 1800 v v rsm non-repetitive peak reverse voltage 960 1300 1700 1900 v v drm repetitive peak off-state voltage 800 1200 1600 1800 v i t(av) average on-state current t c = 82c 200 a i t(rms) r.m.s. on-state current t c = 82c 314 a i tsm surge on-state current 1/2 cycle, 50hz/60hz, peak value, non-repetitive 6000/6500 a i 2 t i 2 t (for fusing) value for one cycle surge current 180000 a 2 s p gm peak gate power dissipation 10 w p g(av) average gate power dissipation 3 w i fgm peak gate current 3 a v fg m peak gate voltage (forward) 10 v v rg m peak gate voltage (reverse) 5 v di/dt critical rate of rise of on-state current i g =100ma, v d =1/2v drm, dig/dt=0.1a/ f s 200 a/ f s v iso isolation breakdown volt age a.c. 1 minute 3000 tj operating junction temperature -40 to +125 c t s t g storage temperature -40 to +125 c mounting m6 recommended value 2.5 to 3.9 4.7 mounting torque terminals m6 recommended value 2.5 to 3.9 4.7 n*m mass typical value 210 g sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 web: www.sanrex .com SCA200AA , sce200 a a internal schematic diagram < sce series > < sca series > pdf trial
sanrex ? thyristor/thyristor, thyristor/diode module SCA200AA, sce200aa series < electrical characteristics > tj= 25 c (unless otherwise noted) per diode symbol item conditions ratings unit i drm repetitive peak off-state current t j = 125c, v d = v drm 100 ma i rrm repetitive peak reverse current t j = 125c, v r = v rrm 100 ma v tm peak on-state voltage i t = 600a 1.4 v t j = 25c 1.0 v vt(t0) threshold voltage t j = 125c 0.85 v t j = 25c 0.8 rt slope resistance t j = 125c 1.1 m ohm i gt gate trigger current vd=6v, it=1a 100 ma v gt gate trigger voltage vd=6v, it=1a 3 v v g d non-trigger gate voltage tj = 125 c, v d =1/2v drm 0.25 v dv/dt critical rate of rise of off-state voltage tj = 125 c, v d =2/3v drm 1000 v/ f s rth(j-c) thermal resistance junction to case 0.155 c/w sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 web : www.sanrex.com oct. 2008 ? 2nd * dimensions in millimeters (1mm=0.0394?) < sca series : thyristor/thyristor > < sce series : thyristor/diode > pdf trial
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